MOSFET DEGRADATION DUE TO NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI) AND HOT CARRIER INJECTION (HCI) AND ITS IMPLICATIONS FOR RELIABILITY-AWARE VLSI DESIGN A Dissertation
نویسندگان
چکیده
Kufluoglu, Haldun Ph.D., Purdue University, December, 2007. MOSFET Degradation due to Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) and Its Implications for Reliability-aware VLSI Design . Major Professor: Muhammad A. Alam. The scaling trends in CMOS technology and operating conditions give rise to serious degradation mechanisms such as Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) in MOSFETs, threatening the circuit and product lifetimes. The aging phenomena, on top of process variations, translate into complexity and reduced design margin for circuits. International Technology Roadmap for Semiconductors mentions reliability as one of the ”Design Technology Challenges” and calls attention to ”Design for Reliability.” In order to increase the overall design efficiency, it is important to (i) understand MOSFET-level degradation, (ii) develop physically robust compact models compatible with circuit simulators, and (iii) implementing tools that incorporate NBTI and HCI reliability into VLSI design process at an early stage. In this work, NBTI and HCI degradation and their implications on MOSFET and circuit reliability are studied. Transistor-level NBTI degradation is explored and experimentally calibrated voltage, temperature, and time dependences are obtained. Recovery characteristics, degradation under AC and random activity relations are derived. Implications for aggressively-scaled and non-planar MOSFET geometries are discussed. With comprehensive experimental and theoretical tools, HCI degradation is investigated, particularly for short channel MOSFETs with lower operating conditions. HCI issues that are unclear in the literature are resolved. The interface trap generation under HCI is linked to NBTI theory, thus degradation of circuits experiencing both mechanisms can be assessed efficiently. Finally, compact
منابع مشابه
Deep Submicron Cmos Vlsi Circuit Reliability Modeling , Simulation and Design
Title of dissertation: DEEP SUBMICRON CMOS VLSI CIRCUIT RELIABILITY MODELING, SIMULATION AND DESIGN Xiaojun Li, Doctor of Philosophy, 2005 Dissertation directed by: Professor Joseph B. Bernstein Reliability Engineering CMOS VLSI circuit reliability modeling and simulation have attracted intense research interest in the last two decades, and as a result almost all IC Design For Reliability (DFR)...
متن کاملExploiting Semiconductor Properties for Hardware Trojans
This paper discusses the possible introduction of hidden reliability defects during CMOS foundry fabrication processes that may lead to accelerated wearout of the devices. These hidden defects or hardware Trojans can be created by deviation from foundry design rules and processing parameters. The Trojans are produced by exploiting time-based wearing mechanisms (HCI, NBTI, TDDB and EM) and/or co...
متن کاملOn-Chip Reliability Monitor for Measuring Frequency Degradation
In the aging tolerant digital circuit design, precise measurement of digital circuit degradation is a kind of key aspect. In this project, we will build a type of digital on-chip reliability monitor for measuring degradation of frequency in high-resolution for digital circuits. This technique is made by measuring the beat frequency of two ring oscillators, which has one stressed and another uns...
متن کامل11-1 An All-In-One Silicon Odometer for Separately Monitoring HCI, BTI, and TDDB
An on-chip reliability monitor capable of separating the aging effects of HCI, BTI, and TDDB with sub-ps precision is presented. A pair of stressed ring oscillators is implemented in which one ages due to both BTI and HCI, while the other suffers from only BTI. Frequency degradation is monitored with a beat frequency detection system achieving sub-μs measurement times. Measurement results are p...
متن کاملAccurate Quantitative Physics-of-Failure Approach to Integrated Circuit Reliability
Modern electronics typically consist of microprocessors and other complex integrated circuits (ICs) such as FPGAs, ADCs, and memory. They are susceptible to electrical, mechanical and thermal modes of failure like other components on a printed circuit board, but due to their materials, complexity and roles within a circuit, accurately predicting a failure rate has become difficult, if not impos...
متن کامل